题  目：二维拓扑绝缘体中边态和体态的共存与调控

报告人：张艳阳 副研究员 中国科学院半导体研究所

时  间：1月12日上午10：10，星期一

地  点：理科二号楼B409

报告摘要：We investigate the scattering and localization properties of edge and bulk states in a disordered two-dimensional topological insulator when they coexist at the same Fermi energy. Due to edge-bulk backscattering (which is not prohibited a priori by topology or symmetry), Anderson disorder makes the edge and bulk states localized indistinguishably. Two methods are proposed to effectively decouple them and to restore robust transport. The first kind of decouple is from long range disorder, since edge and bulk states are well separated in k space. The second one is from an edge gating, owing to the edge nature of edge states in real space. The latter can be used to electrically tune a system between an Anderson insulator and a topologically robust conductor, i.e., a realization of a topological transistor。

报告人简介：张艳阳，2006年获南京大学物理系博士学位，先后在中国科学院物理研究所、美国Purdue大学和香港大学从事博士后研究，2011年9月至今在中科院半导体研究所工作。在Phys.Rev. Lett., Phys. Rev. B, Appl. Phys. Lett., New J. Phys. 等发表文章20余篇。近期研究方向为拓扑材料中的电子结构和输运。

Host: Dr. Juntao Song

Email: jtsong@hebtu.edu.cn