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【学术报告】The exploration of electronic structure in quantum materials with ARPES and STM
发布时间:2021-05-19   浏览次数:0

主 讲 人:刘帅     博士,上海科技大学

活动时间:5月19日下午16:00    

地  点:腾讯会议:609 171 623

讲座内容:

The quantum spin Hall insulators (QSHIs) with simple composition and large energy gap has been a focus of condensed matter physics. Recently, it is predicted that the layered material XTe5 (X=Zr, Hf) has a large bulk band gap and single layer of XTe5 is an ideal QSHI material. However, whether it is a strong topological insulator (TI) or a weak TI is still under controversy and its topological nature is very sensitive to its lattice constants (or volume of unit cells). In this talk, we show our works on the electronic properties, especially the topological properties of HfTe5, studied by ARPES and STM/STS. Our findings not only reveal the essential ingredient in the electronic structure but also provide new important information on the edge state in XTe5.

主讲人介绍:

Shuai Liu received Bachelor’s Degree from Wuhan Institute of Technology in 2016 and will receive Ph.D. in condensed matter physics from ShanghaiTech University in 2021. His research interests lie in the electronic structure of topological materials (e.g. topological insulators, topological superconductors), and low dimensional materials (e.g. 2D materials, quantum spin Hall insulators). The experimental techniques for the characterization of electronic structure and surface reconstruction of materials include angle resolved photoemission spectroscopy (ARPES) and scanning tunneling microscope/ spectroscopy (STM/STS).